| 000 | 12546nam a2202737 i 4500 | ||
|---|---|---|---|
| 001 | 5271197 | ||
| 003 | IEEE | ||
| 005 | 20220712205711.0 | ||
| 006 | m o d | ||
| 007 | cr |n||||||||| | ||
| 008 | 151221s2010 njua ob 001 eng d | ||
| 020 |
_a9780470547205 _qelectronic |
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| 020 |
_z9780471202400 _qprint |
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| 020 |
_z0470547200 _qelectronic |
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| 024 | 7 |
_a10.1109/9780470547205 _2doi |
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| 035 | _a(CaBNVSL)mat05271197 | ||
| 035 | _a(IDAMS)0b000064810cc94b | ||
| 040 |
_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL |
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| 050 | 4 |
_aTK7871 .85 _b.N49 2002eb |
|
| 082 | 0 | 4 |
_a621.3815/2 _222 |
| 100 | 1 |
_aNg, Kwok Kwok, _d1952- _927121 |
|
| 245 | 1 | 0 |
_aComplete guide to semiconductor devices / _cKwok K. Ng. |
| 250 | _a2nd ed. | ||
| 264 | 1 |
_a[United States?] : _bIEEE Press, _cc2002. |
|
| 264 | 2 |
_a[Piscataqay, New Jersey] : _bIEEE Xplore, _c[2010] |
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| 300 |
_a1 PDF (xxii, 740 pages) : _billustrations. |
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| 336 |
_atext _2rdacontent |
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| 337 |
_aelectronic _2isbdmedia |
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| 338 |
_aonline resource _2rdacarrier |
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| 504 | _aIncludes bibliographical references and index. | ||
| 505 | 0 | _aPreface. Preface to the First Edition. Introduction. DIODES I: RECTIFIERS. p-n Junction Diode. p-i-n Diode. Schottky-Barrier Diode. Planar-Doped-Barrier (PDB) Diode. Isotype Heterojunction. DIODES II: NEGATIVE RESISTANCE N-SHAPED. Tunnel Diode. Transferred-Electron Device (TED). Resonant-Tunneling Diode. Resonant-Interband-Tunneling (RIT) Diode. Single-Barrier Tunnel Diode. Single-Barrier Tunnel Diode. Single-Barrier Interband-Tunneling Diode. Real-Space-Transfer (RST) Diode. DIODES III: NEGATIVE RESISTANCE S-SHAPED. Metal-Insulator-Semiconductor Switch (MISS). Planar-Doped-Barrier (PDB) Switch. Amorphous Threshold Switch. Heterostructure Hot-Electron Diode (HHED). DIODES IV: NEGATIVE RESISTANCE TRANSIT-TIME. Impact-Ionization-Avalanche Transit-Time (IMPATT) Diode. Barrier-Injection Transit-Time (BARITT) Diode. RESISTIVE AND CAPACITIVE DEVICES. Resistor. Metal-Oxide-Semiconductor (MOS) Capacitor. Charge-Coupled Device (CCD). TRANSISTORS I: FIELD-EFFECT. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Junction Field-Effect Transistor (JFET). Metal-Semiconductor Field-Effect Transistor (MESFET). Modulation-Doped Field-Effect Transistor (MODFET). Permeable-Base Transistor. Static-Induction Transistor (SIT). Real-Space-Transfer (RST) Transistor. Planar-Doped Field-Effect Transistor. Surface-Tunnel Transistor. Lateral Resonant-Tunneling Field-Effect Transistor (LRTFET). Stark-Effect Transistor. Velocity-Modulation Transistor (VMT). TRANSISTOR II: POTENTIAL-EFFECT. Bipolar Transistor. Tunneling Hot-Electron-Transfer Amplifier (THETA). Metal-Base Transistor. Bipolar Inversion-Channel Field-Effect Transistor (BICFET). Tunnel-Emitter Transistor (TETRAN). Planar-Doped-Barrier (PDB) Transistor. Heterojunction Hot-Electron Transistor (HHET). Induced-Base Transistor. Resonant-Tunneling Bipolar Transistor (RTBT/RBT). Resonant-Tunneling Hot-Electron Transistor (RHET). Quantum-Well-Base Resonant-Tunneling Transistor (QWBRTT). Spin-Valve Transistor. NONVOLATILE MEMORIES. Floating-Gate Avalanche-Injection Metal-Oxide-Semiconductor (FAMOS) Transistor. Metal-Nitride-Oxide-Semiconductor (MNOS) Transistor. THYRISTORS AND POWER DEVICES. Silicon-Controlled Rectifier (SCR). Insulated-Gate Bipolar Transistor (IGBT). Static-Induction Thyristor (SIThy). Unijunction Transistor. PHOTONICS I: LIGHT SOURCES. Light-Emitting Diode (LED). Injection Laser. PHOTONICS II: PHOTODETECTORS. Photoconductor. p-i-n Photodiode. Schottky-Barrier Photodiode. Charge-Coupled Image Sensor (CCIS). Avalanche Photodiode (APD). Phototransistor. Metal-Smiconductor-Metal (MSM) Photodetector. Quantum-Well Infrared Photodetector (QWIP). Quantum-Dot Infrared Photodetector (QDIP). Blocked-Impurity-Band (BIB) Photodetector. Negative-Electron-Affinity (NEA) Photocathode. Photon-Drag Detector. PHOTONICS III: BISTABLE OPTICAL DEVICES. Self-Electrooptic-Effect Device (SEED). Bistable Etalon. PHOTONICS IV: OTHER DEVICES. Solar Cell. Electroabsorption Modulator. Thermistor. Hall Plate. Strain Gauge (Gage). Interdigital Transducer (IDT). Ion-Sensitive Field-Effect Transistor (ISFET). Appendix A: Selected Nonsemiconductor Devices. Appendix B: Physical Phenomena. Appendix C: General Applications of Device Groups. Appendix D: Physical Properties. Appendix E: Background Information. Index. | |
| 506 | 1 | _aRestricted to subscribers or individual electronic text purchasers. | |
| 520 | _aA definitive and up-to-date handbook of semiconductor devices Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years. Because there is a growing need for faster and more complex systems for the information age, existing semiconductor devices are constantly being studied for improvement, and new ones are being continually invented. As a result, a large number of types and variations of devices are available in the literature. The Second Edition of this unique engineering guide continues to be the only available complete collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices. As in the First Edition, the value of this text lies in its comprehensive, yet highly readable presentation and its easy-to-use format, making it suitable for a wide range of audiences. . Essential information is presented for a quick, balanced overview. Each chapter is designed to cover only one specific device, for easy and focused reference. Each device is discussed in detail, always including its history, its structure, its characteristics, and its applications The Second Edition has been significantly updated with eight new chapters, and the material rearranged to reflect recent developments in the field. As such, it remains an ideal reference source for graduate students who want a quick survey of the field, as well as for practitioners and researchers who need quick access to basic information, and a valuable pragmatic handbook for salespeople, lawyers, and anyone associated with the semiconductor industry. | ||
| 530 | _aAlso available in print. | ||
| 538 | _aMode of access: World Wide Web | ||
| 588 | _aDescription based on PDF viewed 12/21/2015. | ||
| 650 | 0 |
_aSemiconductors _vHandbooks, manuals, etc. _913586 |
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| 650 | 0 |
_aSemiconductors _xHistory. _927122 |
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| 655 | 0 |
_aElectronic books. _93294 |
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| 695 | _aNonhomogeneous media | ||
| 695 | _aNonvolatile memory | ||
| 695 | _aOptical bistability | ||
| 695 | _aOptical devices | ||
| 695 | _aOptical feedback | ||
| 695 | _aOptical fibers | ||
| 695 | _aOptical modulation | ||
| 695 | _aOptical reflection | ||
| 695 | _aOptical refraction | ||
| 695 | _aOptical surface waves | ||
| 695 | _aOptical switches | ||
| 695 | _aOptical variables control | ||
| 695 | _aOscillators | ||
| 695 | _aOxidation | ||
| 695 | _aP-i-n diodes | ||
| 695 | _aP-n junctions | ||
| 695 | _aPIN photodiodes | ||
| 695 | _aPatents | ||
| 695 | _aPeriodic structures | ||
| 695 | _aPhonons | ||
| 695 | _aPhotoconducting materials | ||
| 695 | _aPhotoconductivity | ||
| 695 | _aPhotodetectors | ||
| 695 | _aPhotodiodes | ||
| 695 | _aPhotoelectricity | ||
| 695 | _aPhotonics | ||
| 695 | _aPhototransistors | ||
| 695 | _aPhotovoltaic cells | ||
| 695 | _aPiezoelectric devices | ||
| 695 | _aPixel | ||
| 695 | _aProgramming | ||
| 695 | _aQuantum capacitance | ||
| 695 | _aQuantum dots | ||
| 695 | _aQuantum well devices | ||
| 695 | _aQuantum wells | ||
| 695 | _aRadiation effects | ||
| 695 | _aRadiative recombination | ||
| 695 | _aRadio frequency | ||
| 695 | _aRectifiers | ||
| 695 | _aReflection | ||
| 695 | _aRegisters | ||
| 695 | _aResistance | ||
| 695 | _aResonant tunneling devices | ||
| 695 | _aSQUIDs | ||
| 695 | _aSatellites | ||
| 695 | _aScattering | ||
| 695 | _aSchottky diodes | ||
| 695 | _aSemiconductor device measurement | ||
| 695 | _aSemiconductor diodes | ||
| 695 | _aSemiconductor lasers | ||
| 695 | _aSemiconductor waveguides | ||
| 695 | _aSensors | ||
| 695 | _aSilicides | ||
| 695 | _aSilicon | ||
| 695 | _aSolids | ||
| 695 | _aSpin valves | ||
| 695 | _aSpontaneous emission | ||
| 695 | _aStimulated emission | ||
| 695 | _aStrain | ||
| 695 | _aStrain measurement | ||
| 695 | _aSubstrates | ||
| 695 | _aSuperlattices | ||
| 695 | _aSurface acoustic wave devices | ||
| 695 | _aSurface acoustic waves | ||
| 695 | _aSurface treatment | ||
| 695 | _aSwitches | ||
| 695 | _aTemperature | ||
| 695 | _aTemperature dependence | ||
| 695 | _aTemperature distribution | ||
| 695 | _aTemperature measurement | ||
| 695 | _aTemperature sensors | ||
| 695 | _aThermal conductivity | ||
| 695 | _aThermal expansion | ||
| 695 | _aThermal resistance | ||
| 695 | _aThermionic emission | ||
| 695 | _aThermistors | ||
| 695 | _aThreshold current | ||
| 695 | _aThreshold voltage | ||
| 695 | _aThyristors | ||
| 695 | _aTransconductance | ||
| 695 | _aTransducers | ||
| 695 | _aTransistors | ||
| 695 | _aTunneling | ||
| 695 | _aVaristors | ||
| 695 | _aVoltage control | ||
| 695 | _aWire | ||
| 695 | _aAbsorption | ||
| 695 | _aAcoustic waves | ||
| 695 | _aAluminum | ||
| 695 | _aAmorphous silicon | ||
| 695 | _aAmplitude modulation | ||
| 695 | _aAnodes | ||
| 695 | _aApproximation methods | ||
| 695 | _aArrays | ||
| 695 | _aAvalanche breakdown | ||
| 695 | _aAvalanche photodiodes | ||
| 695 | _aBipolar transistors | ||
| 695 | _aBolometers | ||
| 695 | _aCameras | ||
| 695 | _aCapacitance | ||
| 695 | _aCapacitors | ||
| 695 | _aCathodes | ||
| 695 | _aCeramics | ||
| 695 | _aCharge carrier processes | ||
| 695 | _aCharge coupled devices | ||
| 695 | _aCharge transfer | ||
| 695 | _aConductivity | ||
| 695 | _aCrystals | ||
| 695 | _aDark current | ||
| 695 | _aDelay | ||
| 695 | _aDetectors | ||
| 695 | _aDielectrics | ||
| 695 | _aDoping | ||
| 695 | _aDoping profiles | ||
| 695 | _aEPROM | ||
| 695 | _aElectric fields | ||
| 695 | _aElectric potential | ||
| 695 | _aElectrodes | ||
| 695 | _aElectroluminescence | ||
| 695 | _aElectromagnetic spectrum | ||
| 695 | _aElectron mobility | ||
| 695 | _aElectron traps | ||
| 695 | _aElectron tubes | ||
| 695 | _aEpitaxial growth | ||
| 695 | _aEpitaxial layers | ||
| 695 | _aEquations | ||
| 695 | _aFETs | ||
| 695 | _aFilms | ||
| 695 | _aFingers | ||
| 695 | _aFrequency modulation | ||
| 695 | _aGallium arsenide | ||
| 695 | _aGas lasers | ||
| 695 | _aGermanium | ||
| 695 | _aGlow discharges | ||
| 695 | _aGratings | ||
| 695 | _aHEMTs | ||
| 695 | _aHeat sinks | ||
| 695 | _aHeat transfer | ||
| 695 | _aHeterojunctions | ||
| 695 | _aHigh temperature superconductors | ||
| 695 | _aHistory | ||
| 695 | _aImage sensors | ||
| 695 | _aImpurities | ||
| 695 | _aIndexes | ||
| 695 | _aIndium gallium arsenide | ||
| 695 | _aInsulated gate bipolar transistors | ||
| 695 | _aInsulators | ||
| 695 | _aIntegrated optics | ||
| 695 | _aIonization | ||
| 695 | _aIons | ||
| 695 | _aJFETs | ||
| 695 | _aJunctions | ||
| 695 | _aLaser modes | ||
| 695 | _aLaser theory | ||
| 695 | _aLattices | ||
| 695 | _aLight emitting diodes | ||
| 695 | _aLinearity | ||
| 695 | _aLithography | ||
| 695 | _aLogic gates | ||
| 695 | _aMESFETs | ||
| 695 | _aMOCVD | ||
| 695 | _aMODFETs | ||
| 695 | _aMOS capacitors | ||
| 695 | _aMOSFET circuits | ||
| 695 | _aMagnetic field measurement | ||
| 695 | _aMagnetic fields | ||
| 695 | _aMagnetic tunneling | ||
| 695 | _aMagnetization | ||
| 695 | _aMagnetomechanical effects | ||
| 695 | _aMagnetometers | ||
| 695 | _aMagnetoresistance | ||
| 695 | _aMagnetoresistive devices | ||
| 695 | _aMasers | ||
| 695 | _aMaterials | ||
| 695 | _aMetals | ||
| 695 | _aMicrowave circuits | ||
| 695 | _aMicrowave devices | ||
| 695 | _aMicrowave filters | ||
| 695 | _aMicrowave oscillators | ||
| 695 | _aMixers | ||
| 695 | _aModulation | ||
| 695 | _aMolecular beam epitaxial growth | ||
| 695 | _aMoment methods | ||
| 695 | _aMonte Carlo methods | ||
| 695 | _aNeodymium | ||
| 695 | _aNoise | ||
| 710 | 2 |
_aJohn Wiley & Sons, _epublisher. _96902 |
|
| 710 | 2 |
_aIEEE Xplore (Online service), _edistributor. _927123 |
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| 776 | 0 | 8 |
_iPrint version: _z9780471202400 |
| 856 | 4 | 2 |
_3Abstract with links to resource _uhttps://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5271197 |
| 942 | _cEBK | ||
| 999 |
_c73972 _d73972 |
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