000			05134cam a2200469Mi 4500
001			ocn965735579
003			OCoLC
005			20220711203323.0
006			m o d
007			cr |n|||||||||
008			161209s2017 si ob 001 0 eng d
040			_aYDX _beng _cYDX _dDG1 _dN$T _dIDEBK _dOCLCF
020			_a9781119107361 _q(electronic bk.)
020			_a1119107369 _q(electronic bk.)
020			_a9781119107378 _q(electronic bk.)
020			_a1119107377 _q(electronic bk.)
020			_z9781119107354 (cloth)
020			_z1119107350 (cloth)
020			_z9781119107385 (epub)
020			_z1119107385 (epub)
035			_a(OCoLC)965735579
050		4	_aTK7871.99.M44
072		7	_aTEC _x009070 _2bisacsh
082	0	4	_a621.3815/2 _223
049			_aMAIN
100	1		_aOmura, Y. _q(Yasuhisa), _eauthor. _96482
245	1	0	_aMOS devices for low-voltage and low-energy applications _h[electronic resource] / _cYasuhisa Omura, Abhijit Mallik, and Naoto Matsuo.
264		1	_aSingapore ; _aHoboken, NJ : _bJohn Wiley & Sons, _c2017.
300			_a1 online resource.
505	0		_aINTRODUCTION TO LOW-VOLTAGE AND LOW-ENERGY DEVICES. Why Are Low-Voltage and Low-Energy Devices Desired? -- History of Low-Voltage and Low-Power Devices -- Performance Prospects of Subthreshold Logic Circuits -- SUMMARY OF PHYSICS OF MODERN SEMICONDUCTOR DEVICES. Overview -- Bulk MOSFET -- SOI MOSFET -- Tunnel Field-Effect Transistors (TFETs) -- POTENTIAL OF CONVENTIONAL BULK MOSFETs. Performance Evaluation of Analog Circuits with Deep Submicrometer MOSFETs in the Subthreshold Regime of Operation -- Impact of Halo Doping on the Subthreshold Performance of Deep-Submicrometer CMOS Devices and Circuits for Ultralow Power Analog/Mixed-Signal Applications -- Study of the Subthreshold Performance and the Effect of Channel Engineering on Deep Submicron Single-Stage CMOS Amplifiers -- Subthreshold Performance of Dual-Material Gate CMOS Devices and Circuits for Ultralow Power Analog/Mixed-Signal Applications -- Performance Prospect of Low-Power Bulk MOSFETs -- POTENTIAL OF FULLY-DEPLETED SOI MOSFETs. Demand for High-Performance SOI Devices -- Demonstration of 100 nm Gate SOI CMOS with a Thin Buried Oxide Layer and its Impact on Device Technology -- Discussion on Design Feasibility and Prospect of High-Performance Sub-50 nm Channel Single-Gate SOI MOSFET Based on the ITRS Roadmap -- Performance Prospects of Fully Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuits for RF-ID Chips -- The Potential and the Drawbacks of Underlap Single-Gate Ultrathin SOI MOSFET -- Practical Source/Drain Diffusion and Body Doping Layouts for High-Performance and Low-Energy Triple-Gate SOI MOSFETs -- Gate Field Engineering and Source/Drain Diffusion Engineering for High-Performance Si Wire Gate-All-Around MOSFET and Low-Power Strategy in a Sub-30 nm-Channel Regime -- Impact of Local High-k Insulator on Drivability and Standby Power of Gate-All-Around SOI MOSFET -- POTENTIAL OF PARTIALLY DEPLETED SOI MOSFETs. Proposal for Cross-Current Tetrode (XCT) SOI MOSFETs -- Device Model of the XCT-SOI MOSFET and Scaling Scheme -- Low-Power Multivoltage Reference Circuit Using XCT-SOI MOSFET -- Low-Energy Operation Mechanisms for XCT-SOI CMOS Devices -- QUANTUM EFFECTS AND APPLICATIONS - 1. Overview -- Si Resonant Tunneling MOS Transistor -- Tunneling Dielectric Thin-Film Transistor -- Proposal for a Tunnel-Barrier Junction (TBJ) MOSFET -- Performance Prediction of SOI Tunneling-Barrier-Junction MOSFET -- Physics-Based Model for TBJ-MOSFETs and High-Frequency Performance Prospects -- Low-Power High-Temperature-Operation-Tolerant (HTOT) SOI MOSFET -- QUANTUM EFFECTS AND APPLICATIONS - 2. Overview of Tunnel Field-Effect Transistor -- Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor -- The Impact of a Fringing Field on the Device Performance of a P-Channel Tunnel Field-Effect Transistor with a High-k Gate Dielectric -- Impact of a Spacer-Drain Overlap on the Characteristics of a Silicon Tunnel Field-Effect Transistor Based on Vertical Tunneling -- Gate-on-Germanium Source Tunnel Field-Effect Transistor Enabling Sub-0.5-V Operation -- PROSPECTS OF LOW-ENERGY DEVICE TECHNOLOLGY AND APPLICATIONS. Performance Comparison of Modern Devices -- Emerging Device Technology and the Future of MOSFET -- How Devices Are and Should Be Applied to Circuits -- Prospects for Low-Energy Device Technology and Applications.
504			_aIncldues bibliographical references and index.
650		0	_aMetal oxide semiconductors. _96483
650		7	_aTECHNOLOGY & ENGINEERING / Mechanical _2bisacsh _96484
650		7	_aMetal oxide semiconductors. _2fast _0(OCoLC)fst01017624 _96483
655		4	_aElectronic books. _93294
700	1		_aMallik, Abhijit, _eauthor. _96485
700	1		_aMatsuo, N. _q(Naoto), _eauthor. _96486
776	0	8	_iPrint version: _z9781119107354 _z1119107350 _z9781119107385 _z1119107385 _w(DLC) 2016026240 _w(OCoLC)951506454
856	4	0	_uhttps://doi.org/10.1002/9781119107361 _zWiley Online Library
942			_cEBK
994			_a92 _bDG1
999			_c68678 _d68678